TeraSense has developed an original patent-protected technology for making a new generation of semiconductor imaging systems for Terahertz (THz) and sub-THz frequency ranges. TeraSense devices bridge terahertz gap (0.1 — 1) THz. The heart of the imaging system is terahertz detector. TeraSense detectors have an advantage with their low cost and ease of fabrication in large quantities in the form of 2D arrays, thanks to compatibility of the technology with mass-production lines of semiconductor industry. The imaging arrays are scalable in the number of pixels.
With the use of TeraSense imaging chips, an extremely compact and sensitive terahertz camera can be produced. That makes it possible to effectively use TeraSense imaging chips for a number of applications:
For the terahertz generation purposes TeraSense uses proprietary IMPATT and backward-wave oscillator (BWO) technologies. These THz sources allow for the delivery of up to 1 W continuous wave power at sub-terahertz frequencies (0.1 – 0.3) THz.