Terahertz generators

Terahertz generators

IMPATT technology 100 GHz and 140 GHz High power output

IMPATT technology

100 GHz and 140 GHz

available frequencies

High power output

Protective isolator for enhanced stability coin11.png Shield.png

Protective isolator

for enhanced stability

Low cost and compact size

1 year warranty

THz source description

TeraSense series of IMPATT diodes are silicon double drift diodes with a 0.6 um transit region, mounted on copper heat sink. The layers in double-drift diodes are: a heavily doped (p+)-region, a moderately doped pregion, a moderately doped n-region, and a heavily doped (n+)-region. The (p+) — and (n+) — regions allow ohmic electrical contacts to be made to the external circuit. The device relies on negative resistance to generate and sustain an oscillation.

Terasense is now offering its upgraded version of IMPATT diode. The upgraded IMPATT diode is outfitted with a protective isolator, which significantly improves output power stability. From now on you can order IMPATT diode with either rigidly fixed horn antenna or WR- flange of your choice. Typical output rfpower of IMPATT diode with optimized frequency @ 100 GHz can reach up to 80 mW.

IMPATT diode
100 GHz
~ 80 mW output rfpower
Conical horn antenna / Flange type output
Protective Isolator
TTL Modulation
IMPATT diode
140 GHz
~ 30 mW output rfpower
Conical horn antenna / Flange type output
Protective Isolator
TTL Modulation

Demonstration of THz generator

Demonstration of THz imaging

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