Terahertz sources
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IMPATT technology
GaAs Schottky technology -
100 GHz, 140 GHz, 200 GHz, 300 GHz and 600 GHz available frequencies
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Up to 2 W output power
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Computer-controlled attenuation
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Low cost and compact size
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1 year warranty
Terahertz generator description
The TeraSense series of terahertz sources (IMPATT diodes) is represented by silicon double drift diodes with a 0.6 um transit region, mounted on a copper heat sink. The layers in double-drift diodes are: a heavily doped (p+)-region, a moderately doped (p+)-region, a moderately doped n-region, and a heavily doped (n+)-region. The (p+)-and (n+)-regions allow ohmic electrical contacts to be made to the external circuit. The device relies on negative resistance to generate and sustain an oscillation.
Terasense is now offering its upgraded version of the terahertz source. The upgraded IMPATT diode is outfitted with a protective isolator, which significantly improves output power stability. From now on you can order an IMPATT diode with either an open WR- flange or detachable horn antenna of your choice. Typical output rfpower of THz source with optimized frequency @ 100 GHz can reach up to 2 W.
In addition, TeraSense sources feature ergonomic design and ease of use. The company can optionally supply a THz generator with attenuator and switch sections.
180 mW
400 mW
0.8 W
1.8 W
output rf power
Conical horn antenna /
Flange type output
Protective Isolator
TTL Modulation
80 mW
180 mW
400 mW
output rf power
Conical horn antenna /
Flange type output
Protective Isolator
TTL Modulation
70 mW
200 mW
output rf power
Diagonal horn antenna /
Flange type output
TTL Modulation
290 GHz > 30 mW
290 GHz > 50 mW
output rf power
Diagonal horn antenna /
Flange type output
TTL Modulation
output rf power
Diagonal horn antenna /
Flange type output
TTL Modulation
Demonstration of THz generator
New powerful terahertz sources
