Terahertz sources

Terahertz sources

IMPATT technology 100 GHz and 140 GHz High power output

IMPATT technology

100 GHz, 140 GHz and 300 GHz

available frequencies

High power output

Protective isolator for enhanced stability coin11.png Shield.png

Protective isolator

for enhanced stability

Low cost and compact size

1 year warranty

THz source description

TeraSense series of terahertz sources (IMPATT diodes) are silicon double drift diodes with a 0.6 um transit region, mounted on copper heat sink. The layers in double-drift diodes are: a heavily doped (p+)-region, a moderately doped pregion, a moderately doped n-region, and a heavily doped (n+)-region. The (p+) — and (n+) — regions allow ohmic electrical contacts to be made to the external circuit. The device relies on negative resistance to generate and sustain an oscillation.

Terasense is now offering its upgraded version of terahertz source. The upgraded IMPATT diode is outfitted with a protective isolator, which significantly improves output power stability. From now on you can order IMPATT diode with either rigidly fixed horn antenna or WR- flange of your choice. Typical output rfpower of THz source with optimized frequency @ 100 GHz can reach up to 100 mW.

IMPATT diode
100 GHz

~ 80 mW output rfpower

Conical horn antenna /
Flange type output

Protective Isolator
TTL Modulation

IMPATT diode
140 GHz

~ 30 mW output rfpower

Conical horn antenna /
Flange type output

Protective Isolator
TTL Modulation

IMPATT diode
300 GHz

~ 10 mW output rfpower

Conical horn antenna /
Flange type output

Protective Isolator
TTL Modulation

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Terasense
Terasense
Product Name
Terahertz sources

Demonstration of THz generator

Demonstration of THz imaging

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