Terahertz sources
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IMPATT technology | 100 GHz, 140 GHz, 180 GHz and 300 GHz available frequencies | High power output |
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Protective isolator for enhanced stability | Low cost and compact size | 1 year warranty |
THz source description
TeraSense series of terahertz sources (IMPATT diodes) are silicon double drift diodes with a 0.6 um transit region, mounted on copper heat sink. The layers in double-drift diodes are: a heavily doped (p+)-region, a moderately doped pregion, a moderately doped n-region, and a heavily doped (n+)-region. The (p+) — and (n+) — regions allow ohmic electrical contacts to be made to the external circuit. The device relies on negative resistance to generate and sustain an oscillation.
Terasense is now offering its upgraded version of terahertz source. The upgraded IMPATT diode is outfitted with a protective isolator, which significantly improves output power stability. From now on you can order IMPATT diode with either rigidly fixed horn antenna or WR- flange of your choice. Typical output rfpower of THz source with optimized frequency @ 100 GHz can reach up to 100 mW.
| THz source 100 GHz ~ 80 mW output rfpower Conical horn antenna / Protective Isolator | THz source 140 GHz ~ 30 mW output rfpower Conical horn antenna / Protective Isolator | THz source 180 GHz ~ 10 mW output rfpower Conical horn antenna / Protective Isolator | THz source 300 GHz ~ 10 mW output rfpower Conical horn antenna / Protective Isolator |
Demonstration of THz generator
